Simulation Monte Carlo d’un transistor MESFET à base de ZnO

Abstract

This work aims to numerically simulate the influence of high voltage and high tempera- ture on the I-V current-voltage characteristics of a ZnO-based MESFET transistor using a Monte Carlo simulator. Calculations on bulk ZnO were performed to provide information on the electron drift velocity as a function of the electric field. Results for GaAs and GaN were also presented, but mainly for comparison. Our simulation results show that, thanks to the high drain current density, the ZnO MESFET can expect superior performance in terms of power and high voltages. Clearly, wide-bandgap ZnO exhibits much lower intrinsic carrier concentrations than GaAs at high

temperatures. This implies that devices intended for higher temperatures should be fabrica-ted with it. However, the results showed that for temperatures above 300 K, a reduction in drain current was observed and, consequently, a reduced output power. These results show much closer agreement with available literature data.