Etude Elaboration et caractérisation de couches minces de La-SnS2

Abstract

In the current study, we report on the synthesis and in-depth characterizations of La (2%, 4%)-doped SnS2 thin films prepared by means of a spray-coated approach from clear molecular ink for photodegradation application. The effects of La doping on the structural, chemical and morphological properties of the thin films were investigated by range of suited techniques. Our results showed that the pure SnS2 films are grown in the SnS2 phase with (101) preferred planes while a second phase of Sn2S3 appears by introducing La doping. La détection des éléments Sn, S et La dans les résultats de l'analyse EDX confirme la formation de SnS2 et la présence du dopage au La. The infrared spectroscopy analysis confirms the presence of Sn-S bonds in the La-doped SnS2 thin films. Finally, the films are found to exhibit a band gap ranging from 2 eV to 2.22 eV.