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dc.contributor.authorGHOUL, ABDERREZZAQ-
dc.date.accessioned2024-02-18T09:33:07Z-
dc.date.available2024-02-18T09:33:07Z-
dc.date.issued2019-
dc.identifier.citationhttps://theses.univ-temouchent.edu.dz/opac_css/doc_num.php?explnum_id=2686en_US
dc.identifier.urihttp://dspace.univ-temouchent.edu.dz/handle/123456789/2415-
dc.description.abstractThe material ZnO was interesting in electronic, optoelectronic , photovoltaic and environnement applications. The devices performances so elaborated are depending on their structural state and chemical composition. Thus, the spectroscopy technics XPS (X-Ray Photoelectron Spectroscopy) an AES (Auger Electron Spectroscopy) are adopted for showing their chemical identification and their electron distribution on the core levels and on the levels near the valence band. These technics are complementary to display the cleaned state of the surface. We even adopt both technics to follow the oxidation of zinc metal under UHV.The creating of defects by argon ion bombardment advantage the oxidation process of zinc by heatingat 150°C. The physical proprieties of materials are depending on the electron distribution of ZnO. We give results about their characterization by UPS(UV Photoelectron Spectroscopy) confirmed by EELS(Electron Energy Loss Spectroscopy).en_US
dc.titleL’importance de caractérisations spectroscopiques pour le matériau ZnOen_US
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